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  savantic semiconductor product specification silicon npn power transistors 2SC1863 description with to-66 package continuous collector current-i c =7a power dissipation ?p c =40w @t c =25  applications designed for general-purpose amplifier and switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a p t total power dissipation t c =25 40 w t j junction temperature 150  t stg storage temperature -55~150  fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1863 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 100 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 0.5 v v be base-emitter on voltage i c =1a ; v ce =2v 1.0 v i cbo collector cut-off current v cb =150v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe-1 dc current gain i c =3a ; v ce =5v 20 h fe-2 dc current gain i c =5a ; v ce =5v 15
savantic semiconductor product specification 3 silicon npn power transistors 2SC1863 package outline fig.2 outline dimensions


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